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Latch-up characteristics of a trench-gate conductivity modulated power transistor

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4 Author(s)
Cai Jun ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong ; J. K. O. Sin ; Wai Tung Ng ; P. P. T. Lai

In this paper, a new conductivity modulated power transistor, called the Lateral Trench-Gate Bipolar Transistor (LTGBT), is presented. The current at which the latch-up occurs in the structure is estimated in comparison with that of the LIGBT. The latch-up current density for the LTGBT exhibits more than 7.7 times improvement over the LIGBT. The dependence of the latch-up current density on the design of the n+ and p+ cathode regions of the structure is also examined. The maximum controllable latch-up current density is found to increase with decreasing the space between the trench gate and the p+ cathode

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995