Referenced Items are not available for this document.
A theoretical analysis of metal-oxide-silicon (MOS) device degradation due to trapping of positive charges in thin (27, 33 nm) SiO 2 gate oxides is presented. n+-polySi-gate (MOS) capacitors are stressed at a low electron injection fluence (<0.01 C/cm2) by Fowler-Nordheim (FN) electron tunneling from the quantized accumulation layer of ⟨100⟩ n-Si substrate, at constant current and constant applied gate voltage. The present analysis assumes tunneling electron initiated band-to-band impact ionization (BTBII) in SiO2, as the possible source of trapped holes during stress. The validity of the present analysis has been examined by comparing the theoretical values with the experimental data of FN threshold voltage shift ΔVFN of Fazan et al
Published in:
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Date of Conference: 6-10 Nov 1995
- Page(s):
- 260 - 262
- Meeting Date :
- 06 Nov 1995-10 Nov 1995
- Print ISBN:
- 0-7803-2624-5
- INSPEC Accession Number:
- 5262639
- Digital Object Identifier :
- 10.1109/TENCON.1995.496388
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
