By Topic

Influence of neutral hole traps in thin gate oxides on MOS device degradation during Fowler-Nordheim stress

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Samanta, P. ; Dept. of Phys., Jadavpur Univ., Calcutta, India ; Sarkar, C.K.

A theoretical analysis of metal-oxide-silicon (MOS) device degradation due to trapping of positive charges in thin (27, 33 nm) SiO 2 gate oxides is presented. n+-polySi-gate (MOS) capacitors are stressed at a low electron injection fluence (<0.01 C/cm2) by Fowler-Nordheim (FN) electron tunneling from the quantized accumulation layer of ⟨100⟩ n-Si substrate, at constant current and constant applied gate voltage. The present analysis assumes tunneling electron initiated band-to-band impact ionization (BTBII) in SiO2, as the possible source of trapped holes during stress. The validity of the present analysis has been examined by comparing the theoretical values with the experimental data of FN threshold voltage shift ΔVFN of Fazan et al

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995