By Topic

Hot-carrier induced trapped carriers and interface states in MOSFETs observed by gate-to-drain capacitance measurement

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
R. Ghodsi ; AWA MicroElectron., Homebush, NSW, Australia ; Y. T. Yeow

Hot carrier induced trapped carriers and interface states in n- and p-channel MOSFETs were studied using small signal gate-to-drain capacitance measurements. The results presented concentrate on the stress condition resulting in a high gate-to-drain transverse electric field. Under this condition the degradation of both n- and p-channel devices was found to be due to the trapping of majority carriers and generation of acceptor interface states in the upper half of the bandgap

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995