By Topic

Hot electron induced channel length shortening model and its impact on HEIP in PMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Park, J.T. ; Dept. of Electron. Eng., Inchon Univ., South Korea ; Kim, Y.T. ; Kim, D.K. ; Hong, S.T.
more authors

A new analytical model based on a pseudo two dimensional model is presented for the hot electron induced channel length shortening (ΔLH) of PMOSFET. It has been founded that ΔLH is a logarithmic function of both the stress time and the degradation of punchthrough voltage, and is also a linear function of the degradation of the drain current. ΔLH can be predicted from the measurement of the gate current (ΔLH∝Ign) and can thus be used for the current calculation of a degraded PMOSFET

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995