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Deep-submicron MOSFET modeling for circuit simulation

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3 Author(s)
Min-Chie Jeng ; Cadence Design Syst. Inc., San Jose, CA, USA ; Zhihong Liu ; Yuhua Cheng

This paper describes recent activities and trends in MOSFET modeling. Both the DC and AC aspects of MOSFET models are covered. Due to the more stringent requirements, test procedures for both analog and digital applications have been proposed. Existing SPICE models are evaluated against these tests. In particular, BSIM3 and MOS9, the two mostly discussed candidates for the standard deep-submicron MOSFET model, are compared

Published in:
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference: 6-10 Nov 1995

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