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PL study of (Al,Ga)As epilayers grown on (100), (111)B and vicinal (111)B GaAs substrates

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6 Author(s)
Guokui Kuang ; Inst. of Semicond., Acad. Sinica, Beijing, China ; Zhanguo Wang ; Jibeng Liang ; Bo Xu
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For the first time, we have grown (Al,Ga)As/GaAs epilayers which show some remarkable quantum wire characteristics-red shift as much as 98 meV-on vicinal (111)B GaAs substrate. For comparison, the epilayers were also deposited on (100) and (111)B substrates simultaneously. But the PL results of these three samples are very different-we explained these PL results with a model based on growth dynamics and drew a conclusion that steps on (111)B surface can play a very important role in crystal growth

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995