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Basic chemistry and mechanisms of plasma etching

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3 Author(s)
Flamm, Daniel L. ; Bell Laboratories, Murray Hill, New Jersey 07974 ; Donnelly, Vincent M. ; Ibbotson, Dale E.

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A recent review of plasma etching is extended with discussions of similarity variables governing discharges, anisotropic oxide etching in fluorine and unsaturate‐rich plasmas, surface texture, the loading effect, and gas‐surface reactions.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:1 ,  Issue: 1 )