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Low resistivity indium–tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of films

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4 Author(s)
Ishibashi, S. ; Institute for Super Materials, ULVAC JAPAN, Ltd., 523 Yokota Sanbu Chiba, 289‐12, Japan ; Higuchi, Y. ; Ota, Y. ; Nakamura, K.

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A low resistivity and high transmittance Sn doped In2O3 (ITO) film was formed on a glass substrate by dc magnetron sputtering and lower sputtering voltage gave a lower resistivity film. At a sputtering voltage of -250 V, the resistivity obtained was 5.0×10-4Ω cm for room temperature substrate, 2.0×10-4Ω cm for 160 °C substrate, 1.9×10-4Ω cm for 200 °C substrate, and 1.2×10-4Ω cm for 460 °C substrate. At a sputtering voltage of -80 V, the resistivity was 1.3×10-4Ω cm for 200 °C substrate. A measurement of Hall effect shows that the decreased resistivity by lower sputtering voltage is not caused by the Hall mobility but by an increased carrier concentration.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:8 ,  Issue: 3 )