By Topic

Low resistivity indium–tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ishibashi, S. ; Institute for Super Materials, ULVAC JAPAN, Ltd., 523 Yokota Sanbu Chiba, 289‐12, Japan ; Higuchi, Y. ; Ota, Y. ; Nakamura, K.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A low resistivity and high transmittance Sn doped In2O3 (ITO) film was formed on a glass substrate by dc magnetron sputtering and lower sputtering voltage gave a lower resistivity film. At a sputtering voltage of -250 V, the resistivity obtained was 5.0×10-4Ω cm for room temperature substrate, 2.0×10-4Ω cm for 160 °C substrate, 1.9×10-4Ω cm for 200 °C substrate, and 1.2×10-4Ω cm for 460 °C substrate. At a sputtering voltage of -80 V, the resistivity was 1.3×10-4Ω cm for 200 °C substrate. A measurement of Hall effect shows that the decreased resistivity by lower sputtering voltage is not caused by the Hall mobility but by an increased carrier concentration.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:8 ,  Issue: 3 )