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Hole-size dependent highly selective SiO2 etching with a hexthode-type wide-gap plasma etcher

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2 Author(s)
Hosomi, Shinichi ; Manufacturing Engineering Center, Mitsubisi Electric Company, 8-1-1 Tukaguchi Honmachi, Amagasaki, Hyogo 661, Japan ; Omori, Nobuhiko

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.580688 

We carry out contact-hole etching of SiO2 with a high selectivity over the underlying Si using a hexthode-type wide-gap plasma etcher. In spite of the low power density in the plasma, heavy fluorocarbon deposition was observed. The amount of deposition is thought to depend on the bias voltage near the surface of the wafer. Selectivity is low in smaller holes (≪∅0.8 μm), since the deposition radicals are shaded and cannot reach the bottom of the holes. In larger holes (≫∅0.8 μm), however, selectivity is very high (≫50), and almost infinite in a hole of ∅2.0 μm in diameter. Moreover, sidewall deposition is enough to prevent retardation of the resist even in smaller holes. As a result, quite unique hole-size dependent etching characteristics were obtained, such as tapered etching for smaller holes and high selectivity etching for larger holes. This oxide etcher is applicable when large shallow holes and small deep holes must be etched at the same time. © 1997 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:15 ,  Issue: 3 )

Date of Publication:

May 1997

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