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Deposition of preferred-orientation ZnO films on the ceramic substrates and its application for surface acoustic wave filters

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3 Author(s)
Chu, Sheng-Yuan ; Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan ; Chen, Te-Yi ; Water, W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1738653 

Polycrystal ZnO films with c-axis (002) orientation have been successfully grown on the lead-based ceramic substrates by rf magnetron sputtering technique. The deposited films were characterized as a function argon-oxygen gas flow ratio and rf power. Crystalline structures of the films were investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Highly oriented films with c-axis normal to the substrates can be obtained by depositing under a total pressure of 10 mTorr containing 50% argon and 50% oxygen and rf power of 70 W. The phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency of surface acoustic wave (SAW) device with ZnO/IDT/PT (IDT: interdigital transducer; PT:PbTiO3 ceramics) structure were investigated. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient of SAW device. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 4 )

Date of Publication:

Jul 2004

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