Cart (Loading....) | Create Account
Close category search window
 

Composition, structural, and electrical properties of fluorinated silicon–nitride thin films grown by remote plasma-enhanced chemical-vapor deposition from SiF4/NH3 mixtures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Fandino, J. ; Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Ciudad Universitaria, Coyoacán 04510, México Distrito Federal, México ; Ortiz, A. ; Rodrı guez-Fernandez, L. ; Alonso, J.C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1699335 

Fluorinated silicon–nitride films (SiNx:F) have been prepared at 250 °C by remote plasma-enhanced chemical-vapor deposition using mixtures of SiF4/NH3 in different proportions. The structure, relative composition, and fluorine content of the films were evaluated by Fourier-transform infrared spectroscopy, Rutherford backscattering, ellipsometry, and resonant nuclear-reaction analysis. The electrical properties of the films were also assessed from the current–voltage characteristics of Al–SiNx:F–Si metal–insulating–semiconductor structures. It was found that the SiF4/NH3 ratio produces little influence on the refractive index and density of the films, but this ratio has important effects on the fluorine content, deposition rate, and electrical properties. In general, these SiNx:F films are free of Si–H bonds, chemically stable, and show breakdown fields above 8 MV/cm. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 3 )

Date of Publication:

May 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.