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Electron-cyclotron-resonance plasma etching of the ZnO layers grown by molecular-beam epitaxy

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8 Author(s)
Ogata, K. ; Bio Venture Center, Osaka Institute of Technology, Asahi-Ku, Osaka, 535-8585 Japan ; Honden, T. ; Tanite, T. ; Komuro, T.
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Etching of high-quality ZnO layers grown by molecular-beam epitaxy was examined by using electron-cyclotron-resonance plasma etching. Etching rates of ZnO layers were larger using CH4 than CF4, and four times more enhanced by using a mixture of the two gases. For a ZnO surface covered with photoresist layers by the plasma-etching procedure, degradation was mostly recovered by thermal annealing in an O2 atmosphere at the proper temperatures. This was found to be effective for the recovery of the layers. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 3 )

Date of Publication:

May 2004

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