Cart (Loading....) | Create Account
Close category search window
 

Plasma etching of high dielectric constant materials on silicon in halogen chemistries

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Sha, Lin ; Department of Chemical Engineering, University of California, Los Angeles, California 90095 ; Chang, Jane P.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1627771 

Plasma etching of ZrO2 and HfO2 was studied in BCl3/Cl2 plasmas, as functions of the ion energy, chamber pressure, microwave power, and gas compositions. MClx is found to be the major etching product in Cl2 plasmas while MBxCly is the major etching product in BCl3 plasmas. The etching selectivity to Si is increased at lower ion energies and higher electron temperatures. Increasing microwave powers and reducing chamber pressures in BCl3/Cl2 plasmas increased the Cl and BCl2+ densities in the gas phase and consequently increased the metal oxide etch rate. A phenomenological model that takes into account the Cl density, BCl2+ density, and metal oxygen bond strength is proposed to describe the etch rate of ZrO2 and HfO2 in pure BCl3 plasmas as functions of the ion energy, microwave power, and chamber pressure. More accurate Cl flux measurement is needed to improve the model predictions. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 1 )

Date of Publication:

Jan 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.