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Resistance analysis of wrapped through emitters

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5 Author(s)
Nicola Mingirulli ; Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany ; Marion Driessen ; Daniela Grote ; Daniel Biro
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To analyze the via-hole emitter resistance two different test devices were designed consisting of symmetric n+pn+-structures whereas the emitter via-holes are ideally the only connection between the two emitter layers. The first device allows measuring the resistance of a single via hole. The second device features a plurality of via holes, in order to determine the resistance of 25…100 via-holes in parallel. Subtracting spreading resistance and geometry contributions with an analytical approach the via-hole resistance can be deduced from both methods. The presented approach reveals the series resistance contribution of the emitter via-hole independently of the complete solar cell device. Further it permits to test a variety of emitter formation processes, metallization schemes and damage etching or texturization steps regarding their specific series resistance contribution or the general feasibility of a process sequence respectively.

Published in:

Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE

Date of Conference:

11-16 May 2008