By Topic

Resistance analysis of wrapped through emitters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Mingirulli, N. ; Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany ; Driessen, Marion ; Grote, Daniela ; Biro, D.
more authors

To analyze the via-hole emitter resistance two different test devices were designed consisting of symmetric n+pn+-structures whereas the emitter via-holes are ideally the only connection between the two emitter layers. The first device allows measuring the resistance of a single via hole. The second device features a plurality of via holes, in order to determine the resistance of 25…100 via-holes in parallel. Subtracting spreading resistance and geometry contributions with an analytical approach the via-hole resistance can be deduced from both methods. The presented approach reveals the series resistance contribution of the emitter via-hole independently of the complete solar cell device. Further it permits to test a variety of emitter formation processes, metallization schemes and damage etching or texturization steps regarding their specific series resistance contribution or the general feasibility of a process sequence respectively.

Published in:

Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE

Date of Conference:

11-16 May 2008