Direct implantation of Fe, Ni or Mn at doses of 3–5×1016 cm-2 into p-type 6H-SiC substrates was carried out at a sample temperature of ∼350 °C. Subsequent annealing was performed at 700–1000 °C for 5 mins. Residual damage in the form of end-of-range defects and dislocation loops in the region from the surface to a depth of ∼0.20 μm were examined by transmission electron microscopy. To the sensitivity of both x-ray diffraction and selected area diffraction pattern analysis, no secondary phases could be detected. Signatures of ferromagnetism were observed in all the highest dose samples, with apparent Curie temperatures of 50 K (Ni), 250 K (Mn), and 270 K (Fe). © 2002 American Vacuum Society.