Synthesis of BN_x–SiN_y composite films by multisource plasma chemical vapor deposition

BN_x–SiN_y composite films were deposited by a multisource plasma chemical vapor deposition (PCVD). Two plasma generators, A and B, were implemented. BF₃ and NH₃ gases introduced to plasma generator A were separately decomposed by two rf electrodes, respectively. SiH₄ and NH₃ gases were also separately decomposed in the plasma generator B. Widely spread sheet-like plasma generated by a dc arc plasma gun above the substrate and under a magnetic field also excited the gas in front of the substrate. By this CVD system, the composition of the BN_x–SiN_y films can be controlled, and the BN_x–SiN_y films with several atomic percent of silicon are found to have higher hardness and higher electrical resistivity than BN_x film. © 2001 American Vacuum Society.