By Topic

Bipolar Resistive Electrical Switching of CuTCNQ Memories Incorporating a Dedicated Switching Layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Robert Muller ; Interuniversity Microelectron. Center, Leuven ; Christoph Krebs ; Ludovic Goux ; Dirk J. Wouters
more authors

In this letter, we investigate bipolar resistive switching of CuTCNQ-based memory cells in which various types of oxides are incorporated as dedicated switching layer (SL) in a bottom electrodeoxideCuTCNQtop electrode configuration. The bottom electrode was Pt as well as n+Si. As oxide SL, we used Al2O3 , HfO2, ZrO2, and SiO2. Au was employed as the top electrode. The basic memory characteristics appear to be independent of the type of oxide used. This gives clear indication that the materials investigated as SL mainly act as matrix in which conductive channels are formed and dissolved.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 6 )