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AlGaN/GaN HEMT High Power Densities on \hbox {SiC/} \hbox {SiO}_{2} /poly-SiC Substrates

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11 Author(s)
Nicolas Defrance ; Inst. d'Electron., de Microelectron. et de Nanotechnol., Inst. d'Electron., Villeneuve-d'Ascq ; Virginie Hoel ; Yannick Douvry ; Jean Claude De Jaeger
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In this letter, successful operation at 10 GHz of T-gate HEMTs on epitaxial structures grown by metal-organic chemical vapor deposition (MOCVD) or MBE on composite substrates is demonstrated. The used device fabrication process is very similar to the process used on monocrystalline SiC substrate. High power density was measured on both epimaterials at 10 GHz. The best value is an output power density of 5.06 W/mm associated to a power-added efficiency (PAE) of 34.7% and a linear gain of 11.8 dB at VDS = 30 V for the components based on MOCVD-grown material. The output power density is 3.58 W/mm with a maximum PAE of 25% and a linear gain around 15 dB at VDS = 40 V for the MBE-grown material.

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IEEE Electron Device Letters  (Volume:30 ,  Issue: 6 )