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GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel

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2 Author(s)
Fortuna, S.A. ; Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL ; Xiuling Li

We demonstrate the first metal-semiconductor field-effect transistor with a self-assembled planar lang110rang GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ~150 mV/dec, maximum gm of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ~4100 cm2/Vmiddots with corresponding electron concentration of 2.3middot1017 cm-3 is derived by fitting the experimental data using a self-consistent long channel field effect device model.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 6 )

Date of Publication:

June 2009

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