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Development of temperature-stable thick-film dielectrics. II. Medium-K dielectric

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1 Author(s)
Bi-Shiou Chiou ; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

For pt.I see ibid., vol.12, no.4, p.789-97 (1989). A temperature-stable, medium dielectric constant (K=100) thick-film dielectric is developed for high-temperature electronic instrumentation. A theoretical model predicts a temperature-insensitive dielectric in the glass-Bi4Ti3O12-SrTiO 3 system, while experimental results suggest an optimum composition in the glass-SrTiO3-BaTiO3 system. Interfacial polarization is the major factor which causes the deviation. The medium-K dielectric, when properly fired, terminated, and heat-treated, can work adequately from 25°C to 400°C

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Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:12 ,  Issue: 4 )