Development of temperature-stable thick-film dielectrics. I. Low K dielectric

A temperature-stable low-dielectric constant (K~10) thick-film dielectric was developed. Dielectric formulations were prepared by combining appropriate amounts of α-Al₂O₃, γ-Al₂O₃, or TiO₂ with Frit G1 and/or Frit G2. A dual frit approach proves to be an effective method in eliminating the pinhole problems in the fabrication of thick-film capacitors. Substrate bodies and diffusion of electrode and substrate ingredients into the dielectric are two major factors which affect the dielectric properties of the capacitors. The low-K dielectric developed in this study can work adequately from 25°C to 500°C, and at 500°C for an extended period of time