Referenced Items are not available for this document.
A new method is proposed and successfully demonstrated for the fabrication of polycrystalline silicon (poly-Si) nanowire (NW) transistors with rectangular-shaped NW channels and two independent gates. The two independently controllable gates allow higher flexibility in device operation and provide a unique insight into the conduction mechanism of the NW device. Our results indicate that dramatic performance enhancement is feasible when the thickness of the NW channel is sufficiently thin, and the two conduction channels in the NW structure are operating simultaneously.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
6
)
Date of Publication: June 2009
- Page(s):
- 644 - 646
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10666155
- Digital Object Identifier :
- 10.1109/LED.2009.2018493
- Product Type:
- Journals & Magazines
- Date of Publication :
- 28 April 2009
- Date of Current Version :
- 26 May 2009
- Issue Date :
- June 2009
- Sponsored by :
- IEEE Electron Devices Society
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