Improvement of luminescence properties of InGaP/InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD

Data are presented on the luminescence performance of InGaP-InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD. The epitaxial layers are grown in a modified Emcore Model GS3200 UTM reactor at a pressure of 60 Torr. The epitaxial films are deposited at 750 C on GaAs:Si substrates oriented toward the nearest <111>A direction. PL peak energies on InGaP bulk layers indicate nearly complete disordering of InGaP on GaAs substrates.