By Topic

Non-destructive detection of ion implant contamination: a SEMATECH/AMD study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wenner, V. ; Adv. Micro Devices Inc., Austin, TX, USA ; Lowell, John ; Jinghong Shi ; Larson, L.

In this paper we report on a systematic study of ion implantation equipment currently in operation or development by IC manufacturers and equipment vendors. The application of optical surface photovoltage (SPV) to both quantify and qualify bulk implant-induced contaminants in CZ P-type silicon is emphasized. We address the issue of contaminants and exemplify the use of SPV as a passive, in-line technique for assessment of the problem.

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1995. ASMC 95 Proceedings. IEEE/SEMI 1995

Date of Conference:

13-15 Nov 1995