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Simulation of Schottky diode technology and performances for RFID application

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3 Author(s)
Kazimirchik, V. ; Micro- & Nanoeleronics Dept., BSUIR, Minsk ; Nelayev, V. ; Sjakerskii, V.

Simulation results of Schottky diode technology in standard CMOS process and its I-V characteristics are presented. Investigated Schottky diode structure is considered as possible device for RFID application. Simulation was performed by use of Silvaco's ATHENA and ATLAS modules. Obtained results show acceptable output features satisfying RFID specifications.

Published in:
CAD Systems in Microelectronics, 2009. CADSM 2009. 10th International Conference - The Experience of Designing and Application of

Date of Conference: 24-28 Feb. 2009

Page(s):
37 - 38
Print ISBN:
978-966-2191-05-9
INSPEC Accession Number:
10614208
Conference Location :
Lviv-Polyana
Product Type:
Conference Publications

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