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Low noise and high tolerance to radiation effects of complementary bipolar SOI IC technology

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3 Author(s)
Pawlikiewicz, A.H. ; United Technol. Microelectron. Center, Colorado Springs, CO, USA ; Bishop, A. ; Jerome, R.

The 1/f noise performance of Advanced Complementary Bipolar Process from United Technologies (ACUTE) is presented as a function of a total dose, device geometry and polarity as well as bias condition during irradiation. The data shows a significant radiation tolerance and superior low noise as compared with a standard bipolar processes

Published in:

Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE

Date of Conference:

19 Jul 1995