Cart (Loading....) | Create Account
Close category search window
 

Multi-Layer High-K Tunnel Barrier for a Voltage Scaled NAND-Type Flash Cell

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)

Low-voltage program/erase (P/E) operations of a NAND-type flash cell have been demonstrated using a multi-layer tunnel barrier. The concept is to achieve low voltage P/E operations similar to a scaled tunnel barrier without compromising retention by exploiting a multi-layer tunnel oxide consisting of a low-k, high-k and low k material. In this study, barrier engineered tunnel oxides of SiO2-HfOx-SiO2 and SiO2- ZrOx-SiO2 were explored using a Metal-Insulator-Nitride-Oxide- Silicon (MINOS) capacitor with a TiN gate electrode. The device programmed/erased at 16/-22 V for 1 ms and it had a memory window of 6 V. The cell showed less than 2 V charge loss after 27 hours when programmed to a 5 V initial window. The proposed high-K tunnel barrier is a promising alternative for tunnel oxide for sub-35 nm NAND Flash technology.

Published in:

Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on

Date of Conference:

3-3 April 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.