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Surface and Orientation Dependence on Performance of Trigated Silicon Nanowire pMOSFETs

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4 Author(s)
Mehrotra, S. ; Network for Comput. Nano Technol. & Birck Nano Technol. Center, Purdue Univ., West Lafayette, IN ; Paul, A. ; Luisier, M. ; Klimeck, G.

Impact of surface and transport, orientation on hole transport in p-type silicon nanowire MOSFET has been studied using atomistic 10-band sp3s*-SO tight-binding valence band model along with semi classical ballistic top-of-the-barrier approach for tri-gated devices. (100) and (110) surface orientations for <100> and <110> transport orientations were studied. Study of channel current and charge show that, due to heavy hole mass anisotropy, different confinement surfaces impact device performance differently.

Published in:

Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on

Date of Conference:

3-3 April 2009

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