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Intrinsic Mechanism of Drain-Lag and Current Collapse in GaN-Based HEMTs

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3 Author(s)
Hu, W.D. ; Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai ; Chen, X.S. ; Lu, W.

The intrinsic mechanism of drain-lag and current collapse in GaN-based high-electron-mobility-transistors are studied by using two-dimensional transient simulations. The simulated drain-lag characteristics are in good agreement with the reported experimental data. Dynamic pictures of trapping of hot electron under drain-pulse voltages are discussed in detail. The trapped charges may accumulate at gate edge drain side, where the electric field significantly changes, causing a notable current collapse. Quantum-well HEMT structures have been proposed and demonstrated to obtain the optimized performance.

Published in:

Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on

Date of Conference:

3-3 April 2009

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