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Vogel Tutorial

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1 Author(s)
E. M. Vogel ; Dept. of Mater. Sci. & Eng., Univ. of Texas at Dallas, Dallas, TX

Summary form only given. The traditional planar MOSFET consisting of a silicon substrate, a highly doped polysilicon gate electrode, a gate dielectric of SiO2, and doped source and drain had been the basis of integrated circuits for over 30 years. As these traditional materials have been pushed to their limits, entirely new materials (e.g. high-k gate dielectrics, metal gate electrodes, and III-V semiconductors), and new device structures (e.g. fin-FETs) are now required. Electrical characterization of MOS capacitors and FETs has historically been used to extract important parameters of interest (e.g. oxide thickness, interface state density). The tutorial will first review trends in advanced MOS devices and associated materials. Standard MOS capacitor and FET electrical characterization techniques (e.g. capacitance-voltage, mobility extraction) will be reviewed and issues associated with applying these techniques to the characterization of advanced MOS devices will be presented.

Published in:

2009 IEEE Workshop on Microelectronics and Electron Devices

Date of Conference:

3-3 April 2009