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In this paper the analysis, design and characterization of a 12 GHz high-linearity distributed amplifier for ultra-wideband applications are presented. The amplifier is fabricated in a low-cost 0.25 mum SiGe BiCMOS technology. The circuit integrates four cascode gain cells, which are capacitively coupled to the base line. The collector line has been tapered for efficiency improvement. 12 dBm output power have been measured at the 1-dB compression point (P1dB) in the desired frequency range with an associated gain of 11 dB and a gain flatness of plusmn1 dB. The power dissipation of the amplifier is 132 mW from a 3.3 V supply. The chip size is 1.69 mm2. Good agreement between simulation and measurement have been achieved.