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High performance oxide thin film transistors with double active layers

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9 Author(s)
Sun Il Kim ; Semiconductor Laboratory, San 14 Nonseo-dong, Gijung-Gu, Yongin-si, Gyunggi-do, 449-711, Korea ; Chang Jung Kim ; Jae Chul Park ; Ihun Song
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We successfully integrated the high performance oxide thin film transistors with double active layers. The active layer is composed of IZO (or ITO) and GIZO layers. The TFT with ITO/GIZO double active layer shows a high mobility of 104 cm2/V.sec, the acceptable threshold voltage of about 0.5 V and the low Vth shift less than 1 V under voltage stress. These are very promising results for applications in driving large area AMOLED and AMLCD display.

Published in:

2008 IEEE International Electron Devices Meeting

Date of Conference:

15-17 Dec. 2008