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This session focuses on organic and inorganic thin-film devices. Several papers on oxide thin-film TFTs will be presented, along with memory and flexible imaging applications. The first paper, by Kim of Samsung Advanced Institute of Technology, describes high-mobility oxide TFTs using double active layers of IZO (or ITO) and GIZO. The second paper, by Kawamura of Hitachi Ltd., reports an oxide TFT operating at 1.5 V with a sub-threshold slope of 63 mV/decade. The third paper, by Yin of Samsung Advanced Institute of Technology, demonstrates the highest performing oxide TFT-based ring oscillator with propagation delay below 1 ns/stage. The fourth paper, by Lee of Samsung Advanced Institute of Technology, demonstrates the feasibility of a completely oxide based memory using GIZO TFTs in the peripheral circuit with 1D-1R cell structure RRAM. The fifth paper, by Hekmatshoar of the Princeton Institute for the Science and Technology of Materials, report amorphous silicon thin-film transistors with long DC lifetime for AMOLED applications. The sixth paper, by Steudel of IMEC, demonstrates rectification at 869 MHz using organic diodes. The last paper of this session, by Kato of the Quantum-Phase Electronics Center at the University of Tokyo, presents a large-area ultrasonic imaging system utilizing a two-dimensional polymeric transducer array and a printed organic TFT array.