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Device and reliability improvement of HfSiON+LaOx/metal gate stacks for 22nm node application

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20 Author(s)

For the first time, we illustrate the importance of process sequence for LaOx capped HfSiON/metal gate on performance, variability, scaling, interface quality and reliability. La diffusion to the high-k/low-k interface controls Vt, as well as strongly affects mobility, Nit and BTI. La diffusion is limited to the Si surface by employing SiON interface layer (IL) mitigating the issues of La-induced mobility degradation and PBTI. Improved Vt tunability, reliability and performance are achieved with optimized process sequence, high-k thickness control, LaOx deposition and SiON (not SiO2) IL. Tinv=1.15 nm and Vt,lin=0.31 V was obtained while achieving the following attributes: mobility~70%, Nit <5times1010 cm-2, DeltaVt<30 m V within wafer, BTI DeltaVt <40 m V at 125degC. By optimizing these gate stack factors, we have developed and demonstrated structures for 22 nm node LOP application.

Published in:

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Date of Conference:

15-17 Dec. 2008