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Systematic Study of Vth controllability using ALD-Y2O3, La2O3, and MgO2 layers with HfSiON/metal gate first n-MOSFETs for hp 32 nm bulk devices

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9 Author(s)
Kamiyama, S. ; Res. Dept. 1, Semicond. Leading Edge Technol. (Selete), Inc., Tsukuba ; Ishikawa, D. ; Kurosawa, E. ; Nakata, H.
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We present a systematic examination of Vth controllability using Y2O3, La2O3, and MgO2 layers by atomic-layer-deposition (ALD) technology with HfSiON/TaSiN gate first stacks for half-pitch (hp) 32 nm-node metal gated bulk devices. By employing base-Y2O3 layers of 1 mono-layer (ML< 0.5 nm), ultra-thin equivalent-oxide-thickness (EOT: 0.72 nm) can be achieved with excellent Vth controllability (|DeltaVth|> 130 mV), high electron carrier mobility, and very high drain current (> 1100 muA/mum) at a low Ioff value (100 nA/mum). Moreover, the positive-bias-temperature-instability (PBTI) over a 10-year lifetimes can be readily achieved with Vg= +1.0 V at 125degC.

Published in:

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Date of Conference:

15-17 Dec. 2008