Systematic Study of Vth controllability using ALD-Y2O3, La2O3, and MgO2 layers with HfSiON/metal gate first n-MOSFETs for hp 32 nm bulk devices

We present a systematic examination of V
_th
controllability using Y
₂
O
₃
, La
₂
O
₃
, and MgO
₂
layers by atomic-layer-deposition (ALD) technology with HfSiON/TaSiN gate first stacks for half-pitch (hp) 32 nm-node metal gated bulk devices. By employing base-Y
₂
O
₃
layers of 1 mono-layer (ML< 0.5 nm), ultra-thin equivalent-oxide-thickness (EOT: 0.72 nm) can be achieved with excellent V
_th
controllability (|DeltaV
_th
|> 130 mV), high electron carrier mobility, and very high drain current (> 1100 muA/mum) at a low I
_off
value (100 nA/mum). Moreover, the positive-bias-temperature-instability (PBTI) over a 10-year lifetimes can be readily achieved with V
_g
= +1.0 V at 125degC.