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A new model to understand the origin of the dipole formed at high-k/SiO2 interface is presented. In our model, the areal density difference of oxygen atoms at high-k/SiO2 interface is considered as the cause of the dipole. On the basis of our model it is possible to predict the dipole direction and its magnitude for the candidate gate dielectrics, including ones so far not experimentally reported. The validity of the model was experimentally supported by VFB shifts of MOS capacitors, and core-level shifts in XPS measurements.