By Topic

Fault Secure Encoder and Decoder for NanoMemory Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Helia Naeimi ; Santa Clara Lab., Intel Res., Santa Clara, CA ; AndrÉ DeHon

Memory cells have been protected from soft errors for more than a decade; due to the increase in soft error rate in logic circuits, the encoder and decoder circuitry around the memory blocks have become susceptible to soft errors as well and must also be protected. We introduce a new approach to design fault-secure encoder and decoder circuitry for memory designs. The key novel contribution of this paper is identifying and defining a new class of error-correcting codes whose redundancy makes the design of fault-secure detectors (FSD) particularly simple. We further quantify the importance of protecting encoder and decoder circuitry against transient errors, illustrating a scenario where the system failure rate (FIT) is dominated by the failure rate of the encoder and decoder. We prove that Euclidean geometry low-density parity-check (EG-LDPC) codes have the fault-secure detector capability. Using some of the smaller EG-LDPC codes, we can tolerate bit or nanowire defect rates of 10% and fault rates of 10-18 upsets/device/cycle, achieving a FIT rate at or below one for the entire memory system and a memory density of 1011 bit/cm2 with nanowire pitch of 10 nm for memory blocks of 10 Mb or larger. Larger EG-LDPC codes can achieve even higher reliability and lower area overhead.

Published in:

IEEE Transactions on Very Large Scale Integration (VLSI) Systems  (Volume:17 ,  Issue: 4 )