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On the Possibility of Tunable-Gap Bilayer Graphene FET

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2 Author(s)
Fiori, G. ; Dipt. di Ing. dell''Inf.: Elettron., Inf., Telecomun., Univ. di Pisa, Pisa ; Iannaccone, G.

We explore the device potential of a tunable-gap bilayer graphene (BG) FET exploiting the possibility of opening a bandgap in BG by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schrodinger equations within the nonequilibrium Green's function formalism. We show that the concept works, but the bandgap opening is not strong enough to suppress band-to-band tunneling in order to obtain a sufficiently large Ion/Ioff ratio for CMOS device operation.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )

Date of Publication:

March 2009

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