By Topic

Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Chia-Ta Chang ; Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu ; Shih-Kuang Hsiao ; Chang, Edward Yi ; Chung-Yu Lu
more authors

This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. This phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is likely due to the additional donorlike surface states created through the piezoelectric effect.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )