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Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With Silicon–Germanium Source and Drain

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7 Author(s)
Kian-Ming Tan ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Yang, Mingchu ; Wei-Wei Fang ; Lim, A.E.-J.
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We report the first investigation of the impact of diamond-like carbon (DLC) high-stress liner on strained p-channel metal-oxide-semiconductor field-effect transistors (p-FETs) having silicon-germanium (SiGe) source-and-drain (S/D) stressor. The DLC exhibited a very high compressive stress of ~ 5 GPa. At a fixed I off of 1 x 10-7 A/mum, the DLC liner stressor contributed to a further 11% I on enhancement for p-FETs with Si0.75Ge0.25 S/D. This is the first demonstration that further boost in device performance in a p-FET that is already strained using Si0.75Ge0.25 S/D can be achieved with DLC liner stressor. Due to the extremely high intrinsic compressive stress of the DLC, a very small DLC thickness of ~ 27 nm is sufficient for achieving significant strain effect and performance enhancement.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )

Date of Publication:

March 2009

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