Referenced Items are not available for this document.
New active ESD protection design for the interface circuits between separated power domains has been proposed and successfully verified in a 0.13-mum CMOS technology. The HBM and MM ESD robustness of the separated-power-domain interface circuits with the proposed active ESD protection design can achieve over 4 kV and 400 V, respectively.
Published in:
Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference on
Date of Conference: Nov. 30 2008-Dec. 3 2008
- Page(s):
- 57 - 60
- E-ISBN :
- 978-1-4244-2342-2
- Print ISBN:
- 978-1-4244-2341-5
- INSPEC Accession Number:
- 10455478
- Conference Location :
- Macao
- Digital Object Identifier :
- 10.1109/APCCAS.2008.4745959
- Product Type:
- Conference Publications
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