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Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions

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3 Author(s)
Zs. J. Horvath ; Hungarian Academy of Sciences Research Institute for Technical Physics and Materials Science, Budapest 114, P.O. Box 49., H-1525 Hungary; Budapest Tech, Kandó Kálmán Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest, Tavaszmezö u. 15-17., H-1084 Hungary. e-mail: ; V. Rakovics ; B. Podor

Au contacts have been prepared to In0.12Ga0.88As0.11Sb0.89/GaSb:Te and to GaSb:Ge/GaSb: Te epitaxial structures. For the In0.12Ga0.88As0.11Sb0.89/GaSb:Te structure Au yielded relatively good Schottky contact, but the current-voltage characteristics exhibited two regions at low temperatures due to two competing parallel pathes with different apparent barrier heights, ideality factors, and series resistances. Au on GaSb:Ge/GaSb:Te epitaxial structures resulted in very good ohmic contact.

Published in:

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Date of Conference:

12-16 Oct. 2008