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Quantum-Corrected Simulation of Complementary Nanowire Tunneling Transistors of 5 nm Gate-Length

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2 Author(s)
Heigl, A. ; Inst. for Phys. of Electrotechnol., Tech. Univ. Munchen, Munchen ; Wachutka, G.

Using numerical device simulation we investigated in detail the operational behavior of a cylindrical nanowire tunneling transistor (TFET) and the effect of quantum confinement on its characteristics, with a strong focus on the scalability of such devices. Among others, we discuss the potential device improvements by considering alternative materials for the gate-stack and the source region.

Published in:

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Date of Conference:

12-16 Oct. 2008