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OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor

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4 Author(s)
S. Hasenohrl ; Institute of Electrical Engineering, Slovak Academy of Sciences, 841 04 Bratislava, Slovakia. e-mail: ; M. Kucera ; M. Morvic ; J. Novak

A set of Ga1-xMnxAs epitaxial layers with variable Mn content xMn was prepared using the low-pressure OMVPE. We have studied electrical transport properties and optical characteristics as a function of xMn. Mn atoms are incorporated into the GaAs as an acceptor and at the same time as an electrically neutral centre. The saturation level for doping is 2.2times1018 cm-3. The ternary alloy formation is indicated by photoreflectance measurements and the Mn content in the alloy saturates at 4.1times1020 cm-3.

Published in:

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Date of Conference:

12-16 Oct. 2008