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High-Performance 0.1- \mu\hbox {m} Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

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4 Author(s)
Haifeng Sun ; IfH, THz Electron. Group, ETH Zurich, Zurich ; Alt, A.R. ; Benedickter, H. ; Bolognesi, C.R.

The realization of high-performance 0.1-mum gate AlGaN/GaN high-electron mobility transistors (HEMTs) grown on high-resistivity silicon substrates is reported. Our devices feature cutoff frequencies as high as fT = 75 GHz and fMAX = 125 GHz, the highest values reported so far for AlGaN/GaN HEMTs on silicon. The microwave noise performance is competitive with results achieved on other substrate types, such as sapphire and silicon carbide, with a noise figure F = 1.2-1.3 dB and an associated gain Gass = 8.0-9.5 dB at 20 GHz. This performance demonstrates that GaN-on-silicon technology is a viable alternative for low-cost millimeter-wave applications.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )