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We have studied the fabrication of ultrathin single-crystalline-silicon thin-film transistors (TFTs) on glass. The single-crystalline Si layer was transferred to glass by hydrogen implantation and anodic bonding. The thickness of the silicon-on-glass (SiOG) was controlled down to 10 nm by dry etching. The p-channel SiOG TFTs with 10-nm-thick Si exhibited the field-effect mobility of 134.9 cm2/Vmiddots, threshold voltage of -1.5 V, and gate voltage swing of 0.13 V/dec. The TFTs were found to be stable against gate bias stress of +30 or -30 V.