By Topic

Ultrathin Si Thin-Film Transistor on Glass

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Cheon, Jun Hyuk ; Dept. of Inf. Display & Adv. Display Res. Center, Kyung Hee Univ., Seoul ; Seung Hyun Park ; Moon Hyo Kang ; Jin Jang
more authors

We have studied the fabrication of ultrathin single-crystalline-silicon thin-film transistors (TFTs) on glass. The single-crystalline Si layer was transferred to glass by hydrogen implantation and anodic bonding. The thickness of the silicon-on-glass (SiOG) was controlled down to 10 nm by dry etching. The p-channel SiOG TFTs with 10-nm-thick Si exhibited the field-effect mobility of 134.9 cm2/Vmiddots, threshold voltage of -1.5 V, and gate voltage swing of 0.13 V/dec. The TFTs were found to be stable against gate bias stress of +30 or -30 V.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )