Close category search window
 

Polysulfone- doped polyaniline composite membranes. synthesis and electrochemical characteristics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Voicu, S.I. ; Fac. of Appl. Chem. & Mater. Sci., Univ. Politeh. of Bucharest, Bucharest ; Stanciu, N.D. ; Nechifor, A.C. ; Vaireanu, D.I.
more authors

In order to combine the advantages of polysulfone (PSf) as a membrane material to that of polyaniline as a conductive polymer, one has attempted to obtain novel polysulfone-polyaniline composite membranes by a newly improved technique comparing to the existing ones. The strong point of this technique consists in a phase inversion by immersion precipitation accompanying by chemical reaction followed by the activation of polyaniline with sulfonated beta-cyclodextrine. The above synthesized membranes were structurally characterized using Scanning Electron Microscopy, FT-IR spectroscopy, thermal analysis. The ionic conductivity and electrochemical characteristics were also determined by Electrochemical Impedance Spectroscopy.

Published in:
Semiconductor Conference, 2008. CAS 2008. International  (Volume:2 )

Date of Conference: 13-15 Oct. 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.