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In this paper, we succeed in fabricating ultra short 30 nm gate pseudomorphic high electron mobility transistors (HEMT) with excellent cutoff frequencies. Devices with smaller Schottky barrier layer exhibited a current gain cutoff frequency fT of 450 GHz and a simultaneous maximum oscillation frequency fMAX of 500 GHz. This performance can be attributed to the use of the two-step-recessed gate technology and the maintaining of high aspect ratio in our HEMTs.
Date of Conference: 25-29 May 2008