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Differential absorption spectroscopy for vertically coupled InGaAs quantum dots of p-type modulation doping

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5 Author(s)
Chuang, K.Y. ; Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ. ; Feng, D.J. ; Chen, C.Y. ; Tzeng, T.E.
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We report the differential absorption (Deltaalpha) spectra of the vertically coupled triple-layer InGaAs quantum dots (QDs) at different reverse bias. The results show that the decrease of spacer layer thickness increases the differential absorption. Adding p-type modulation doping further increases the differential absorption amplitude at ground state.

Published in:

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference:

25-29 May 2008